Conference Agenda

 

The timing of the UCPSS program, listed below, is specified in UTC+2h time (it is the local “summer time” in West-Europe).
At previous editions of UCPSS the participants appreciated the strong and lively interactions during sessions through Q&A as well as the informal interactions.
In an attempt to support lively interactions during sessions through Q&A as much as possible in this on-line edition the organisers require, all presenters to give a life presentation and particularly be life on-line for the discussion and Q&A part. Accordingly we encourage the attendees to ask questions in a life fashion (i.e. through live video connection).

A life format has the downside that it puts additional pressure on the timing for a lot of attendants. The time schedule has been made with speakers of Asia scheduled in the morning (i.e. local afternoon to evening) and speakers from USA scheduled in the afternoon (i.e. local early morning). The time slots, though not ideal for a lot of the speakers, are hopefully acceptable for all presenters.

All presentations, including the discussion and Q&A, will be recorded and stored on the website for review by registrants till May 15th 2021. This allows all registrants to conveniently (re-)view the presentations on-demand.


   Monday 12 April 2021 Tutorials

Tentative schedule, subject to changes
 
11:00 – 12:00  |  1 – Basic aspects of cleaning
                                Paul MertensImec Leuven, Belgium
 
12:00 – 13:00  |  ​2 – Cleaning of Ge and GeSi Semiconductor surface
 
 
BREAK 
 
16:00 – 17:00  |  3 Exploring the Cleaning Chemistry/Substrate Synergy for Enhanced Nanoparticle Removalr
                                Jason KeleherLewis University, Department of Chemistry, Romeoville IL, USA
 
17:00 – 18:00  |  ​4 – Surface cleaning of wide band gap semiconductors
 
 
     

 

Click here for the printable program 


Tuesday 13 April 2021

 
08:20 – 08:40 WELCOME AND OPENING
 
 08:20 - 08:40  |  1.1 - Welcome and opening address
                                    Paul Mertens, imec, Belgium
 
08:40 – 09:20 SESSION 1 - FEOL: ETCHING OF GROUP IV SEMICONDUCTORS
 
 08:40 - 09:00 |  1.1 - Reaction Kinetics of Poly-Si Etching in TMAH Solution
                                   Park, taegun, Lim, SangwooYonsei University, Republic of Korea
 
 09:00 – 09:20 |  1.2 - Surface Chemistry and Nanoscale Wet Etching of Group IV Semiconductors in Acidic H2O2 Solutions
                                   van Dorp, Dennisimec, Belgium
 
09:20 – 10:40 SESSION 2 - SUFEOL: ETCH DIELECTRIC FILMS & REMOVAL OF MASKING FILMS
 
 09:20 – 09:40 |  2.1 - Highly Selective Etching between Different Oxide Films by Vapor Phase Cleaning
                                          Nishihara, Kazuki; Inaba, Masaki; Takahashi, Hiroaki
                                             SCREEN Semiconductor Solutions Co., Ltd., Japan
 
 09:40 – 10:00 |  2.2 - Kinetic Study on the Si3N4 Etching in Superheated Water
                                   Son, Changjin; Lim, SangwooYonsei University, Republic of Korea
 
 10:00 – 10:20 |  2.3 - Silicon Corrosion during Selective Silicon Nitride Etch with Hot Diluted Hydrofluoric Acid
                                   Garnier, Philippe (1); Massin, Thomas (1); Chatelet, Corentin (1); Oghdayan, Emmanuel (1); Lauerhaas, Jeffrey (2); Morote,
                                   Carlos (2); Butterbaugh, Jeffery (2)
                                   1. STMicroelectronics, France; 2. TEL Manufacturing and Engineering of America, Inc, USA
 
10:20 – 10:40 |  2.4 - High Performance, Eco-Friendly SPM Cleaning Technology Using Integrated Bench-Single Wafer Cleaning System
                                  Henry, sally ann (1); Chen, Fuping (1); Wang, david (1); zhang, xiaoyan (1); wang, wenjun (1); Ren, Shuchao (1); Jia, Shena (1); Wang, Jun (1);
                                  wang, jane (1); Wang, Xi (1); Tang, Baoguo (1); Lee, Jason (1); KIm, YY (1); Chae, KK (1); Lee, SH (1); Lee, Bruce (1); Lei, Haibo (2); Zhang,
                                  Yu (2); Zhang, Tao (2); Huang, Jun (2); Li, Fang (2); Wang, Chunwei (2); Li, Hong (2); Yang, Yi (2)
                                  1: ACM Research (Shanghai), Inc, United States of America; 2: Shanghai Huali Microelectronics corporation
 
 10:40 – 11:00  BREAK 
   
 11:00 – 13:10  SESSION 3 - CONTAMINATION AND CONTAMINATION CONTROL 
   
11:00 – 11:20 |  3.1 - Direct Analysis of Ultra Trace Metallic Particles in NH3 and HCl Gases by GED-ICP-MS
                                   Kawabata, Katsu; Nishiguchi, Kohei; Ichinose Tatsu, IAS Inc., Japan
   
11:20 – 11:40 |  3.2 - Investigation of Contaminants in Single Wafer Wet Cleaning Using Isopropyl Alcohol
                                   Oh, Seungjun (1); Lee, Sunyoung (2); Kim, Heehwan (3); IAS Inc., Japan
   
11:40 – 12:00 |  3.3 - Cl-Containing Microplastics from the Environment
                                   Knotter, D. Martin; Sharma, Pradeep; Goumans, Leon NXP Semiconductors
   
12:00 – 12:20 |  3.4 - Experimental Wafer Carrier Contamination Analysis and Monitoring in Fully Automated 300 mm Power Production Lines
                                  Zängle, Clara (1); Pfeffer, Markus (1); Franze, Peter (2); Schneider, Germar (2); Bauer, Anton (1)
                                  1: Fraunhofer Institute of integrated Systems and Device Technology; 2: Infineon Technologies Dresden GmbH & Co. KG
   
12:20 – 12:40 |  3.5 - Characterization and Removal of Metallic Contamination in Process Chemicals Using Single Particle Inductively Coupled Plasma
                                  Mass Spectrometry (SP-ICP-MS)

                                  Sampath, Siddarth; Maharjan, Kusum; Ozzello, Anthony; Bhabhe, Ashutosh - Entegris, United States of America
 
12:40 – 13:10 |  3.6 - Surface Cleaning Challenges for Organic Light Emitting Diodes
                                  Chris Giebink
                                  Pennsylvania State University, United States of America
13:10 – 13:30 BREAK 
   
 13:30 – 15:00  SESSION 4 - FEOL: SURFACE CHEMISTRY AND ETCHING OF III-V COMPOUND SEMICONDUCTOR 
   
13:30 – 13:50 |  4.1 - Analysis of Surface Reaction for Group III-V Compound Semiconductors in Functional Water
                                   Nishio, Kenya (1); Oinoue, Takashi (1); Saito, Suguru (1); Hagimoto, Yoshiya (1); Ogawa, Yuuichi (2); Ida, Junichi (2); Iwamoto, Hayato (1)
                                   1: Sony Semiconductor Solutions Corporation, Japan; 2: Kurita Water Industries Ltd.
  
13:50 – 14:10 |  4.2 - Effect of Surface Oxidation on the Material Loss of InGaAs in Acidic Solutions
                                  Na, Jihoon; Lim, Sangwoo - Yonsei University, Republic of Korea
  
14:10 – 14:30 |  4.3 - Characterization of Wet Chemical Atomic Layer Etching of InGaAs
                                  omoki, Hirano; Kenya, Nishio; Takashi, Fukatani; Suguru, Saito; Yoshiya, Hagimoto; Hayato, Iwamoto - Sony Semiconductor Solutions, Japan
  
14:30 – 15:00 |  4.4 - GaN MOS Structures with Low Interface Trap Density
                                  Ronming Chu - Pennsylvania State University, United States of America
  
15:00 – 15:40 BREAK 
  
15:40 – 16:20 SESSION 5 - FEOL: SURFACE PREPARATION OF GROUP IV SEMICONDUCTORS 
  
15:40 – 16:00 |  5.1 - Towards Si-Cap-Free SiGe Passivation: Impact of Surface Preparation on Low-Pressure Oxidation of SiGe
                                  Wostyn, Kurt; Arimura, Hiroaki; Kimura, Yosuke; Hikavyy, Andriy; Rondas, Dirk; Conard, Thierry; Ragnarsson, Lars-Ake; Horiguchi, Naoto
                                  imec, Belgium
  
16:00 – 16:20 |  5.2 - Wet Chemical Cleaning of Organosilane Monolayers
                                  Hinckley, Adam; Muscat, Anthony - University of Arizona, United States of America
 

 

Wednesday 14 April 2021

 
08:00 – 10:00 SESSION 6 - WET PROCESSING IN NARROW SPACES AND PATTERN COLLAPSE
 
Chair:
Co-chair:
 
 
08:00 –  08:20 |  6.1 - Effect of Hydrophobicity and Surface Potential of Siliconon SiO2 Etching in Nanometer-Sized Narrow Spaces
                                   Ueda, Dai (1); Hanawa, Yousuke (1); Kitagawa, Hiroaki (1); Fujiwara, Naozumi (2); Otsuji, Masayuki (2); Takahashi, Hiroaki (2);
                                   Fukami, Kazuhiro (3) - 1: SCREEN Holdings Co., Ltd., Japan
 
08:20 – 08:40 |  6.2 - Formulation and Evaluation of Diluted Sulfuric-Peroxide-HF (DSP+) Mixtures for Cleaning High-Aspect Ratio Contacts in 3D NAND
                                  An, Kook-Hyun; Kim, Hyun-Tae; Kim, Tae-Gon; Park, Jin-Goo - Hanyang University, Korea, Republic of (South Korea
 
08:40 – 09:00 |  6.3 - PDMS Micro-Channels Application for the Study of Dynamic Wetting of Nanoetched Silicon Surfaces Based on Acoustic Characterization Method
                                  Salhab, Abbas (1,2); Carlier, Julien (1); Campistron, Pierre (1); Neyens, Marc (2); Toubal, Malika (1); Nongaillard, Bertrand (1); Thomy, Vincent (3)
                                  1: Univ. Polytechnique Hauts-de-France, CNRS, Univ. Lille, ISEN, Centrale Lille, UMR 8520 - IEMN -Institut d’Électronique de Microélectronique et de
                                  Nanotechnologie, DOAE - Département d’Opto-Acousto-Électronique, F-59313 Valenciennes, France; 
2: STMicroelectronics, 850 rue Monnet,
                                  F-38926 Crolles, France; 3: Institute of Electronics, Microelectronics and Nanotechnology, Univ. Lille, UMR 8520 - 
IEMN, F-59000 Lille, France
 
09:00 – 09:20 |  6.4 - Characterization of Wetting of Deep Silica Nanoholes by Aqueous Solutions Using ATR-FTIR
                                  Vereecke, Guy (1); Dochain, Denis (2); De Coster, Hanne (3); Conlan, Shona (4); Nurekeyeva, Kunsulu (3); Nsimba, Anthony (4);
                                  1: imec, Belgium; 2: UCLouvain, Belgium; 3: KULeuven, Belgium; 4: TU Dublin, Ireland
 
09:20 – 09:40 |  6.5 - New Test Structure Development for Pattern Collapse Evaluations
                                  Xu, XiuMei - imec, Belgium
 
09:40 – 10:00 |  6.6 - Breakthrough of Sublimation Drying by Liquid Phase Deposition
                                  Sasaki, Yuta (1); Hanawa, Yosuke (1); Otsuji, Masayuki (2); Fujiwara, Naozumi (2); Kato, Masahiko (2); Yamaguchi, Yu (2); Takahashi, Hiroaki (2)
                                  1: SCREEN Holdings Co., Ltd., Japan; 2: SCREEN Semiconductor Solutions Co., Ltd., Japan
 
08:00 – 10:00 SESSION 7 - PARTICLE REMOVAL
 
10:00 – 10:20 |  7.1 - Study on Uniform Deposition on 300 mm Silicon Wafer with sub-100 nm Sized Particles for Cleaning Application
                                  Lee, Seungjae (1); Hong, Seokjun (1); Oh, Haerim (3); Chae, Seung-ki (4); Kim, Taesung (1,2)
                                  1: School of Mechanical Engineering, Sungkyunkwan University, Korea; 2: SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Korea;
                                  3: Engineering Lab, SEMES, Korea; 4: Research & Business Foundation, Sungkyunkwan University, Korea
 
10:20 – 10:40 |  7.2 - Ultrafine Particle Removal in the Wafer Cleaning Process Using High Concentration DIO3-DHF Mixture
                                  Han, Hyeonjoon(1,2); Lee, Hunhee(1); Kim, Charles(1); Kim, Yongmok(1); Kim, Taesung(2)

                                  1: Samsung Electronics Co. Ltd.;  2: SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Korea

 
10:40 – 11:00 |  7.3 - Particle Removal in Ultrasonic Water Flow Cleaning Role of Cavitation Bubbles as Cleaning Agents
                                  Ando, Keita (1); Sugawara, Mao (1); Sakota, Riria (1); Ishibashi, TomoatsuIshibashi (2); Matsuo, Hisanori (2); Watanabe, Katsuhide (2)
                                  1: Keio University, Japan; 2: Ebara Corporation, Japan
   
11:00 – 11:20 |  7.4 - Scalable Particle Removal for sub-5 nm Nodes
                                  Yoshida, Yukifumi (1); Akiyama, Katsuya (1); Zhang, Song (1); Ueda, Dai (2); Inaba, Masaki (1); Takahashi, Hiroaki (1)
                                  1: SCREEN Semiconductor Solutions Co., Ltd.; 2: SCREEN Holdings Co., Ltd.
   
11:20 - 11:40 |  7.5 - The Effect of Thermal Aging on Nanoparticle Removal
                                  Kim, Yeoho (1); Jin, Seung-Wan (1); Kim, Hyun-Tae (2); Kim, Tae-Gon (3); Won, Kyu-Hwang (4); Park, Jin-Goo (1,2)
                                  1: Department of Materials Science and Chemical Engineering, Hanyang University, Ansan, 15588, Republic of Korea; 2: Department of Bio-Nano Technology,
                                  Hanyang University, Ansan, 15588, Republic of Korea; 3: Department of Smart Convergence Engineering, Hanyang University, Ansan, 15588,
                                  Republic of Korea; 4: Samsung Electronics Co., Ltd, Hwaseong, 18448, Republic of Korea
   
 11:40 – 12:00  BREAK 
   
 12:00 - 12:30
  POSTER ANNOUNCEMENTS

   Each poster author is allocated 3 minutes to advertise his/her poster using max 3 slides
   
   P01 - Simulation of Rayleigh Bubble Growth near a No-Slip Rigid Wall
             Tanaka, Tomoya; Ando, Keita - Keio University, Japan
   

   P02 - Interaction between Free-Surface Oscillation and Bubble Translation in a Megasonic Cleaning Bath
             Katano, Yu; Ando, Keita -  Keio University, Japan

   
   P03 - Removal of SOC Hard Mask for Patterning of Work Function Metal by Thermally Activated Ozone Gas
             S. Iwahata, M. Inaba, F. Sebaai and E. Altamirano Sanchez - Screen Semiconductor Solutions Co Ltd, Japan
 
   P04 - Removal of Post Etch Residue on BEOL Low-K with Nanolift
             Y. Akanishi, Q. T. Le and Efrain Altamirano SanchezScreen Semiconductor Solutions Co Ltd, Japan
 
   P05 - Selective Ru or Co Etch for 3nm Applications
             HSU, Chien-Pin Sherman; Chen, Polly Yi-TingAvantor, Taiwan
 
   P06 - Remote Plasma Etching of Backend Semiconductor Materials for Reliable Packaging)
             Evertsen, Rogier; Beckers, Nicolle; Wang, Shaoying; Van der Stam, Richard - ASM PT, The Netherlands
 
    P07 - Wafer Container Monitoring concerning Airborne Molecular Contaminations along a 300 mm Power Semiconductor Production Flow)
              Franze, Peter (1); Schneider, Germar (1); Kaskel, Stefan (2)
              1: Infineon Technologies Dresden GmbH & Co. KG, Germany; 2: Chair of Inorganic Chemistry I, Technical University of Dresden, Germany
 
    P08 - Si1-XGeX Selective Etchant for Gate-All-Around Transistors
              Harada, Ken (1); Suzuki, Tatsunobu (2); Kusano, Tomohiro (1); Takeshita, Kan (1); Oniki, Yusuke (3); Altamirano-Sánchez, Efrain (3); Struyf, Herbert (3); Holsteyns, Frank (3)
              1: Mitsubishi Chemical   Corporation, Japan; 2: Mitsubishi Chemical Corporation, Japan; 3: imec, Belgium
 

    P09 - Challenges and Solutions of Replacement Metal Gate Patterning to Enable Gate-All-Around Device Scaling
              Oniki, Yusuke (1); Ragnarsson, Lars-Åke (1); Iino, Hideaki (2); Cott, Daire (1); Chan, Boon Teik (1); Sebaai, Farid (1); Hopf, Toby (1); Dekkers, Harold (1); Dentoni Litta, Eugenio
              (1); 
Altamirano-Sánchez, Efrain (1); Holsteyns, Frank (1); Horiguchi, Naoto (1)
              1: imec, Belgium; 2: Kurita, Japan

 
 12:30-14:00   PARALELL POSTER SESSION
   
 14:20 – 15:20   SESSION 8 - FUNDAMENTALS OF MEGASONIC AGITATION
   
14:20 – 14:40 |  8.1 - Visualization of Acoustic Waves and Cavitation in Ultrasonic Water Flow
                                  Usui, Hidehisa (1); Ishibashi, Tomoatsu (2); Matsuo, Hisanori (2); Watanabe, Katsuhide (2); Ando, Keita (1)
                                  1: Keio University, Japan; 2: Ebara Corporation, Japan
   
14:40 – 15:00 |  8.2 - Effect of Surfactant in Gas Dissolved Cleaning Solutions on Acoustic Bubble Dynamics
                                  Han, SoYoung (1); Yerriboina, Nagendra Prasad (1); Kim, Dong Gyu (1); Sahoo, Bichitra Nanda (1); Kang, Bong Kyun (3); Klipp, Andreas (4); Lim, Geon Ja (3);
                                  Kim, Tae Gon (2); Park, Jin Goo (1)
                                  1: Department of Materials Science and Chemical Engineering, Hanyang University, Ansan, 15588, Republic of Korea;
                                  2: Department of Smart Convergence Engineering,
                                  Hanyang University ERICA, Ansan 15588, Republic of Korea; 3: BASF Company Ltd., Suwon 16419, Republic of Korea;
                                  4: BASF SE, Ludwigshafen, 67056, Germany
   
15:00 – 15:20 |  8.3 - Estimation of the Generation Rate of h· Radicals in a Megasonic Field Using an Electrochemical Technique
                                  Han, Zhenxing (2); Raghavan, Srini (1); Beck, Mark (3)
                                  1: University of Arizona, Materials Science and Engineering; 2: University of Arizona, Chemical and Environmental Engineering; 3: Product Systems, Inc.
   
  
Thursday 15 April 2021

   
 10:50 – 12:50   SESSION 9 - BEOL: INTERCONNECTS AND PACKAGING​
   
10:30 – 10:50 |  9.1 - Copper Catalysis Effect Investigation for TiW Etch Process on Patterned Wafers
                                  Venegoni, Ivan; Votta, Annamaria; Bellandi, Enrico; Pipia, Francesco; Alessandri, Mauro
                                  STMicroelectronics, Italy
   
10:50 – 11:10 |  9.2 - Selective nickel platinum removal without titanium nitride metal gate corrosion
                                  Garnier Philippe (1); Audoin, Marine (2); Pizzetti, Christian (2); Loup, Virginie (3); Gabette, Laurence (3); Morote, Carlos (4); Dekraker, David (4); Schwab, Brent (4) 
                                  1: STMicroelectronics, France. 2: Technic, France; 3: CEA - Leti, France; 4: TEL Manufacturing and Engineering of America, USA
   
11:10 – 11:30 |  9.3 - Roughness and uniformity control during wet etching of molybdenum
                                  Pacco, Antoine (1); Akanishi, Yuya (2); Le, QuocToan (1) - 1: imec, Belgium; 2: SCREEN, Semiconductor Solutions.​
   
11:30 – 11:50 |  9.4 - Effect of Surface Chemistry on Ruthenium Wet Etching
                                  LE, Quoc Toan; KESTERS, Els; DOMS, Mathias; ALTAMIRANO SANCHEZ, Efrain -  imec, Belgium
   
 11:50 – 12:10  BREAK 
   
 12:10 – 15:10  SESSION 10 - POST-CMP CLEANING​
   
12:10 – 12:30 |  10.1 - Effect of Viscosity on Ceria Abrasive Removal in the Buffing CMP Process
                                    Kim, Juhwan (1); Hong, Seokjun (1); Bae, Chulwoo (2); Wada, Yutaka (3); Hiyama, Hirokuni (3); Hamada, Satomi (3); Kim, Taesung (1,2)
                                    1: Department of Mechanical Engineering, Sungkyunkwan University, Korea, Republic of (South Korea);2: Department of
                                    SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Korea, Republic of (South Korea); 3: Ebara Corp (Japan)​
   
12:30 – 12:50 |  10.2 - Nodule Deformation of PVA Roller Brushes on a Rotating Plate: Optimum Cleaning for Nanosized Particles due to Liquid Absorption and
                                    Desorption of Sponge Deformation
                                    Miyaki, Tsubasa (1); Mizushima, Yuki (1); Hamada, Satomi (2); Koshino, Ryota (2); Fukunaga, Akira (2); Sanada, Toshiyuki (1)
                                    1: Shizuoka University, Japan; 2: Ebara Corporation, Japan
   
12:50 – 13:10 |  10.3 - Mechanism of PVA Brush Loading with Ceria Particles during Post-CMP Cleaning Process
                                    Sahir, Samrina (1); Cho, Hwi-Won (1); Yerriboina, Nagendra Prasad (1); Kim, Tae-Gon (2); Wada, Yutaka (3); Hamada, Satomi (3);
                                    Hiyama, Hirokuni (3); Park, Jin-Goo (1)

                                    1: 1: Department of Materials Science and Chemical Engineering, Hanyang University, Ansan, 15588, Korea; 2: Department of Smart Convergence Engineering,
                                    Hanyang University, Ansan, Republic of Korea, 15588.; 3: EBARA Corporation, Fujisawa, Kanagawa, Japan
   
13:10 – 13:30 |  10.4 - Effect of Dissolved Oxygen on Removal of Benzotriazole from Co during a Post-Co CMP Cleaning
                                    Ryu, Heon-Yul (1); Sahoo, Bichitra Nanda (1); Yerriboina, Nagendra Prasad (1); Kim, Tae-Gon (1); Hamada, Satomi (2); Park, Jin-Goo (1)
                                    1: Hanyang University, Korea, Republic of (South Korea); 2: EBARA Corporation, Japan​
   
 13:30 – 14:30  BREAK (PC MEETING)​
   
14:30 – 14:50 |  10.5 - Tribological Characterization of Anionic Supramolecular Assemblies in Post-STI-CMP Cleaning Solution Using a Novel Post-CMP PVA Brush Scrubber
                                    Philipossian, Ara (1); Sampurno, Yasa (1); Theng, Sian (1); Sudargho, Fransisca (1);Wortman-Otto, Katherine (2); Graverson, Carolyn (2); Keleher, Jason (2)
                                    1: Araca, Inc., USA; 2: Lewis University, USA​
   
14:50 – 15:10 |  10.6 - Contact vs. Non-Contact Cleaning: Correlating interfacial reaction mechanisms to processing methodologies for enhanced
                                    FEOL/BEOL post-CMP cleaning
                                    Katherine M. Wortman-Otto, Abigail N. Linhart, Allie M. Mikos, Kiana A. Cahue, and Jason J. Keleher 
                                    Lewis University, Department of Chemistry, Romeoville IL
   
 15:20 – 16:00  SESSION 11 - CONCLUDING REMARKS & BEST STUDENT PAPERS: AWARDS